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| Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SD2240 1.60.15 Unit: mm s Features q q q 0.4 0.80.1 0.4 High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) Ratings -150 -150 -5 -100 -50 125 125 -55 ~ +125 Unit V V V mA mA mW C C 1.60.1 1.00.1 0.5 1 0.5 3 2 0.450.1 0.3 0.750.15 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : I s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage (Ta=25C) Symbol ICBO VCEO VEBO hFE fT Cob NV * Conditions VCB = -100V, IE = 0 IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -10mA IC = -30mA, IB = -3mA VCB = -10V, IE = 10mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz VCE = -10V, IC = -1mA, GV = 80dB, Rg = 100k, Function = FLAT min typ 0 to 0.1 0.20.1 max -1 0.15-0.05 +0.1 s Absolute Maximum Ratings 0.2-0.05 +0.1 Unit A V V -150 -5 130 450 -1 200 4 150 VCE(sat) V MHz pF mV *h FE Rank classification Rank hFE Marking Symbol R 130 ~ 220 IR S 185 ~ 330 IS T 260 ~ 450 IT 1 Transistor PC -- Ta 150 -100 Ta=25C -90 125 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -100 25C Ta=75C -80 2SB1463 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 100 -70 -60 -50 -40 -30 -20 -10 75 Collector current IC (mA) -80 -25C -60 50 -2mA -40 25 -1mA -20 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 Ta=75C 25C -25C IC/IB=10 600 hFE -- IC 250 VCE=-5V 225 500 fT -- I E VCB=-10V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 200 175 150 125 100 75 50 25 400 Ta=75C 300 25C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 200 100 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 IE=0 f=1MHz Ta=25C -3 -10 -30 -100 Collector to base voltage VCB (V) 2 |
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